Electric Properties of AlGaN/GaN/Si High electron Mobility Transistors

Effects of hydrostatic pressure and temperature on the AlGaN/GaN High electron mobility transistors

In this paper, drain-source current, transconductance and cutoff frequency in AlGaN/GaN high electron mobility transistors have been investigated. In order to obtain parameters of exact AlGaN/GaN high electron mobility transistors such as electron density, the wave function, band gap, polarization charge, effective mass and dielectric constant, the hydrostatic pressure and temperature effects a...

Gate capacitances of high electron mobility transistors

The gate-drain capacitance and the sourcedrain capacitance of High Electron Mobility transistors have been measured on a computer-aided measurement system. The variation of these capacitances with transistor bias voltages is explained and compared with the trend predicted by a capacitance model used in literature. Differences in measured and calculated results arise from the assumptions used in...

Passivated AlGaN / GaN High Electron Mobility Transistors

AlGaN/GaN high electron mobility transistors (HEMTs) passivated with LPCVD SiyNz and AlxSiyNz were fabricated side-by-side, and their performance compared in DC, small-signal, and large-signal test environments. AlxSiyNz passivated devices measured a reduced dependence of source resistance with drain current density, 1.5 x the breakdown voltage, and an increased microwave output power and power...

Quantum Confinement in High Electron Mobility Transistors

Modulation-doped semiconductor nanostructures exhibit extraordinary electrical and optical properties that are quantum mechanical in nature. The heart of such structures lies in the heterojunction of two epitaxially grown semiconductors with different band gaps. Quantum confinement in this heterojunction is a phenomenon that leads to the quantization of the conduction and the valence band into ...

Electron transport in nitrogen-polar high electron mobility transistors